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탄화규소의 MOS 계면 특성 향상을 위한 질화처리 효과 : The Effect of Nitridation for Improving Interface Properties of 4H-SiC MOS Device
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- Authors
- Advisor
- 김형준
- Major
- 재료공학부
- Issue Date
- 2011-02
- Publisher
- 서울대학교 대학원
- Keywords
- MOS ; 계면결함밀도 ; 질화처리 ; 증착산화막 ; interface state density ; nitridation ; deposited oxide
- Description
- 학위논문 (석사)-- 서울대학교 대학원 : 재료공학부, 2011.2. 김형준.
- Language
- kor
- URI
- https://hdl.handle.net/10371/159478
http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000029768
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