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AlGaN/GaN HEMT의 오믹 edge 개선과 테이퍼 소오스 비아 공정 개발 : Improved edge acuity of ohmic contacts and tapered source via process of AlGaN/GaN HEMTs
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.advisor | 서광석 | - |
| dc.contributor.author | 이민성 | - |
| dc.date.accessioned | 2019-07-10T05:21:41Z | - |
| dc.date.available | 2019-07-10T05:21:41Z | - |
| dc.date.issued | 2011-08 | - |
| dc.identifier.other | 000000031697 | - |
| dc.identifier.uri | https://hdl.handle.net/10371/159624 | - |
| dc.identifier.uri | http://dcollection.snu.ac.kr:80/jsp/common/DcLoOrgPer.jsp?sItemId=000000031697 | ko_KR |
| dc.description | 학위논문 (석사)-- 서울대학교 대학원 : 전기. 컴퓨터공학부, 2011.8. 서광석. | - |
| dc.format.extent | v, 42장 | - |
| dc.language.iso | kor | - |
| dc.publisher | 서울대학교 대학원 | - |
| dc.subject | AlGaN | - |
| dc.subject | GaN HEMT | - |
| dc.subject | ohmic metal | - |
| dc.subject | edge acuity | - |
| dc.subject | breakdown voltage | - |
| dc.subject | tapered source via | - |
| dc.subject | uniformity | - |
| dc.title | AlGaN/GaN HEMT의 오믹 edge 개선과 테이퍼 소오스 비아 공정 개발 | - |
| dc.title.alternative | Improved edge acuity of ohmic contacts and tapered source via process of AlGaN/GaN HEMTs | - |
| dc.type | Thesis | - |
| dc.type | Dissertation | - |
| dc.description.degree | Master | - |
| dc.contributor.affiliation | 전기. 컴퓨터공학부 | - |
| dc.date.awarded | 2011-08 | - |
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