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Effect of Facile p-Doping on Electrical and Optoelectronic Characteristics of Ambipolar WSe2 Field-Effect Transistors

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dc.contributor.authorSeo, Junseok-
dc.contributor.authorCho, Kyungjune-
dc.contributor.authorLee, Woocheol-
dc.contributor.authorShin, Jiwon-
dc.contributor.authorKim, Jae-Keun-
dc.contributor.authorKim, Jaeyoung-
dc.contributor.authorPak, Jinsu-
dc.contributor.authorLee, Takhee-
dc.date.accessioned2019-11-07T05:59:04Z-
dc.date.available2019-11-07T15:00:38Z-
dc.date.issued2019-09-12-
dc.identifier.citationNanoscale Research Letters, 14(1):313ko_KR
dc.identifier.issn1556-276X-
dc.identifier.urihttp://hdl.handle.net/10371/162647-
dc.description.abstractWe investigated the electrical and optoelectronic characteristics of ambipolar WSe2 field-effect transistors (FETs) via facile p-doping process during the thermal annealing in ambient. Through this annealing, the oxygen molecules were successfully doped into the WSe2 surface, which ensured higher p-type conductivity and the shift of the transfer curve to the positive gate voltage direction. Besides, considerably improved photoswitching response characteristics of ambipolar WSe2 FETs were achieved by the annealing in ambient. To explore the origin of the changes in electrical and optoelectronic properties, the analyses via X-ray photoelectron, Raman, and photoluminescence spectroscopies were performed. From these analyses, it turned out that WO3 layers formed by the annealing in ambient introduced p-doping to ambipolar WSe2 FETs, and disorders originated from the WO3/WSe2 interfaces acted as non-radiative recombination sites, leading to significantly improved photoswitching response time characteristics.ko_KR
dc.description.sponsorshipThe authors appreciate the financial support of the National Creative Research Laboratory program (Grant No. 2012026372) through the National Research Foundation of Korea funded by the Korean Ministry of Science and ICT.ko_KR
dc.language.isoenko_KR
dc.publisherSpringer Openko_KR
dc.subjectWSe2ko_KR
dc.subjectAmbipolar field-effect transistorsko_KR
dc.subjectp-dopingko_KR
dc.subjectElectrical characteristicsko_KR
dc.subjectOptoelectronic characteristicsko_KR
dc.titleEffect of Facile p-Doping on Electrical and Optoelectronic Characteristics of Ambipolar WSe2 Field-Effect Transistorsko_KR
dc.typeArticleko_KR
dc.contributor.AlternativeAuthor서준석-
dc.contributor.AlternativeAuthor조경준-
dc.contributor.AlternativeAuthor이우철-
dc.contributor.AlternativeAuthor신지원-
dc.contributor.AlternativeAuthor김재근-
dc.contributor.AlternativeAuthor김재영-
dc.contributor.AlternativeAuthor박진수-
dc.contributor.AlternativeAuthor이탁희-
dc.identifier.doi10.1186/s11671-019-3137-1-
dc.language.rfc3066en-
dc.rights.holderThe Author(s).-
dc.date.updated2019-09-15T03:34:29Z-
Appears in Collections:
College of Natural Sciences (자연과학대학)Dept. of Physics and Astronomy (물리·천문학부)Physics (물리학전공)Journal Papers (저널논문_물리학전공)
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