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Bendable integrated circuits on plastic substrates by use of printed ribbons of single-crystalline silicon

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dc.contributor.authorAhn, Jong-Hyun-
dc.contributor.authorKim, Hoon-Sik-
dc.contributor.authorMenard, Etienne-
dc.contributor.authorLee, Keon Jae-
dc.contributor.authorZhu, Zhengtao-
dc.contributor.authorKim, Dae-Hyeong-
dc.contributor.authorNuzzo, Ralph G.-
dc.contributor.authorRogers, John A.-
dc.contributor.authorAmlani, Islamshah-
dc.contributor.authorKushner, Vadim-
dc.contributor.authorThomas, Shawn G.-
dc.contributor.authorDuenas, Terrisa-
dc.date.accessioned2020-02-17T04:36:57Z-
dc.date.available2020-02-17T04:36:57Z-
dc.date.created2018-06-29-
dc.date.issued2007-05-
dc.identifier.citationApplied Physics Letters, Vol.90 No.21, p. 213501-
dc.identifier.issn0003-6951-
dc.identifier.other38373-
dc.identifier.urihttps://hdl.handle.net/10371/164371-
dc.description.abstractThis letter presents studies of several simple integrated circuits-n-channel metal-oxide semiconductor inverters, five-stage ring oscillators, and differential amplifiers-formed on thin, bendable plastic substrates with printed ribbons of ultrathin single-crystalline silicon as the semiconductor. The inverters exhibit gains as high as 2.5, the ring oscillators operate with oscillation frequencies between 8 and 9 MHz at low supply voltages (similar to 4 V), and the differential amplifiers show good performance and voltage gains of 1.3 for 500 mV input signals. The responses of these systems to bending-induced strains show that relatively moderate changes of individual transistors can be significant for the operation of circuits that incorporate many transistors. (c) 2007 American Institute of Physics.-
dc.language영어-
dc.publisherAmerican Institute of Physics-
dc.titleBendable integrated circuits on plastic substrates by use of printed ribbons of single-crystalline silicon-
dc.typeArticle-
dc.identifier.doi10.1063/1.2742294-
dc.citation.journaltitleApplied Physics Letters-
dc.identifier.wosid000246775900080-
dc.identifier.scopusid2-s2.0-34249696029-
dc.citation.number21-
dc.citation.startpage213501-
dc.citation.volume90-
dc.identifier.sci000246775900080-
dc.description.isOpenAccessN-
dc.contributor.affiliatedAuthorKim, Dae-Hyeong-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.subject.keywordPlusTHIN-FILM TRANSISTORS-
dc.subject.keywordPlusELECTRONICS-
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  • College of Engineering
  • School of Chemical and Biological Engineering
Research Area Materials Science

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