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Bendable integrated circuits on plastic substrates by use of printed ribbons of single-crystalline silicon
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ahn, Jong-Hyun | - |
dc.contributor.author | Kim, Hoon-Sik | - |
dc.contributor.author | Menard, Etienne | - |
dc.contributor.author | Lee, Keon Jae | - |
dc.contributor.author | Zhu, Zhengtao | - |
dc.contributor.author | Kim, Dae-Hyeong | - |
dc.contributor.author | Nuzzo, Ralph G. | - |
dc.contributor.author | Rogers, John A. | - |
dc.contributor.author | Amlani, Islamshah | - |
dc.contributor.author | Kushner, Vadim | - |
dc.contributor.author | Thomas, Shawn G. | - |
dc.contributor.author | Duenas, Terrisa | - |
dc.date.accessioned | 2020-02-17T04:36:57Z | - |
dc.date.available | 2020-02-17T04:36:57Z | - |
dc.date.created | 2018-06-29 | - |
dc.date.issued | 2007-05 | - |
dc.identifier.citation | Applied Physics Letters, Vol.90 No.21, p. 213501 | - |
dc.identifier.issn | 0003-6951 | - |
dc.identifier.other | 38373 | - |
dc.identifier.uri | https://hdl.handle.net/10371/164371 | - |
dc.description.abstract | This letter presents studies of several simple integrated circuits-n-channel metal-oxide semiconductor inverters, five-stage ring oscillators, and differential amplifiers-formed on thin, bendable plastic substrates with printed ribbons of ultrathin single-crystalline silicon as the semiconductor. The inverters exhibit gains as high as 2.5, the ring oscillators operate with oscillation frequencies between 8 and 9 MHz at low supply voltages (similar to 4 V), and the differential amplifiers show good performance and voltage gains of 1.3 for 500 mV input signals. The responses of these systems to bending-induced strains show that relatively moderate changes of individual transistors can be significant for the operation of circuits that incorporate many transistors. (c) 2007 American Institute of Physics. | - |
dc.language | 영어 | - |
dc.publisher | American Institute of Physics | - |
dc.title | Bendable integrated circuits on plastic substrates by use of printed ribbons of single-crystalline silicon | - |
dc.type | Article | - |
dc.identifier.doi | 10.1063/1.2742294 | - |
dc.citation.journaltitle | Applied Physics Letters | - |
dc.identifier.wosid | 000246775900080 | - |
dc.identifier.scopusid | 2-s2.0-34249696029 | - |
dc.citation.number | 21 | - |
dc.citation.startpage | 213501 | - |
dc.citation.volume | 90 | - |
dc.identifier.sci | 000246775900080 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Kim, Dae-Hyeong | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | ELECTRONICS | - |
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