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Large-scale metal nanoelectrode arrays based on printed nanowire lithography for nanowire complementary inverters
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ko, Han-Seung | - |
dc.contributor.author | Lee, Yeongjun | - |
dc.contributor.author | Min, Sung-Yong | - |
dc.contributor.author | Kwon, Sung-Joo | - |
dc.contributor.author | Lee, Tae-Woo | - |
dc.date.accessioned | 2020-03-12T02:00:04Z | - |
dc.date.available | 2020-03-12T02:00:04Z | - |
dc.date.created | 2018-11-30 | - |
dc.date.issued | 2017-11 | - |
dc.identifier.citation | Nanoscale, Vol.9 No.41, pp.15766-15772 | - |
dc.identifier.issn | 2040-3364 | - |
dc.identifier.other | 70598 | - |
dc.identifier.uri | https://hdl.handle.net/10371/164493 | - |
dc.description.abstract | Nanowire (NW) complementary inverters based on NW channels and NW electrodes are a promising core logic unit of future subminiature, high density and textile-type configured electronic circuits. However, existing approaches based on short NWs (<150 μm) or non-woven nanofibers cannot provide precisely-coordinated NW inverters due to the difficulty in the position and alignment control of each NW. In particular, the large-scale fabrication of highly-aligned metal nanoelectrode (NE) arrays with low resistivity is a challenging issue. Here, we developed large-scale-aligned AgNE arrays with very low resistivity by using printed NW lithography, and then demonstrated NW complementary inverters by combining with direct-printed organic semiconducting NWs. The width of the AgNEs was controlled from 250 to 1000 nm; their resistivity was 2.6 μΩ cm which is quite comparable with that of Ag films (1.6 μΩ cm). We expect that this approach will facilitate advances in the large-scale fabrication of nanoelectronics which will be compatible with printed electronics. | - |
dc.language | 영어 | - |
dc.publisher | Royal Society of Chemistry | - |
dc.title | Large-scale metal nanoelectrode arrays based on printed nanowire lithography for nanowire complementary inverters | - |
dc.type | Article | - |
dc.contributor.AlternativeAuthor | 이태우 | - |
dc.identifier.doi | 10.1039/c7nr06152h | - |
dc.citation.journaltitle | Nanoscale | - |
dc.identifier.wosid | 000413870900004 | - |
dc.identifier.scopusid | 2-s2.0-85032633119 | - |
dc.citation.endpage | 15772 | - |
dc.citation.number | 41 | - |
dc.citation.startpage | 15766 | - |
dc.citation.volume | 9 | - |
dc.identifier.sci | 000413870900004 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Lee, Tae-Woo | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | TRANSPARENT ELECTRODE | - |
dc.subject.keywordPlus | SILVER | - |
dc.subject.keywordPlus | NANOFIBERS | - |
dc.subject.keywordPlus | CIRCUITS | - |
dc.subject.keywordPlus | ENHANCEMENT | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | GRAPHENE | - |
dc.subject.keywordPlus | NETWORK | - |
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