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Large-scale assembly of silicon nanowire network-based devices using conventional microfabrication facilities

DC Field Value Language
dc.contributor.authorHeo, Kwang-
dc.contributor.authorCho, Eunhee-
dc.contributor.authorYang, Jee-Eun-
dc.contributor.authorKim, Myoung-Ha-
dc.contributor.authorLee, Minbaek-
dc.contributor.authorLee, Byung Yang-
dc.contributor.authorKwon, Soon Gu-
dc.contributor.authorLee, Moon-Sook-
dc.contributor.authorJo, Moon-Ho-
dc.contributor.authorChoi, Heon-Jin-
dc.contributor.authorHyeon, Taeghwan-
dc.contributor.authorHong, Seunghun-
dc.date.accessioned2020-04-27T13:26:56Z-
dc.date.available2020-04-27T13:26:56Z-
dc.date.created2020-03-18-
dc.date.issued2008-12-
dc.identifier.citationNano Letters, Vol.8 No.12, pp.4523-4527-
dc.identifier.issn1530-6984-
dc.identifier.other92817-
dc.identifier.urihttps://hdl.handle.net/10371/165872-
dc.description.abstractWe present a method for assembling silicon nanowires (Si-NWs) in virtually general shape patterns using only conventional microfabrication facilities. In this method, silicon nanowires were functionalized with amine groups and dispersed in deionized water. The functionalized Si-NWs exhibited positive surface charges in the suspensions, and they were selectively adsorbed and aligned onto negatively charged surface regions on solid substrates. As a proof of concepts, we, demonstrated transistors based on individual Si-NWs and long networks of Si-NWs.-
dc.language영어-
dc.publisherAmerican Chemical Society-
dc.titleLarge-scale assembly of silicon nanowire network-based devices using conventional microfabrication facilities-
dc.typeArticle-
dc.contributor.AlternativeAuthor홍승훈-
dc.contributor.AlternativeAuthor현택환-
dc.identifier.doi10.1021/nl802570m-
dc.citation.journaltitleNano Letters-
dc.identifier.wosid000261630700075-
dc.identifier.scopusid2-s2.0-61649092562-
dc.citation.endpage4527-
dc.citation.number12-
dc.citation.startpage4523-
dc.citation.volume8-
dc.identifier.sci000261630700075-
dc.description.isOpenAccessN-
dc.contributor.affiliatedAuthorHyeon, Taeghwan-
dc.contributor.affiliatedAuthorHong, Seunghun-
dc.type.docTypeArticle-
dc.description.journalClass1-
dc.subject.keywordPlusFIELD-EFFECT TRANSISTORS-
dc.subject.keywordPlusCARBON NANOTUBES-
dc.subject.keywordPlusGOLD ELECTRODE-
dc.subject.keywordPlus1/F NOISE-
dc.subject.keywordPlusHETEROSTRUCTURES-
dc.subject.keywordPlusSURFACE-
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  • College of Engineering
  • School of Chemical and Biological Engineering
Research Area Chemistry, Materials Science

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