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Large-scale assembly of silicon nanowire network-based devices using conventional microfabrication facilities
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Heo, Kwang | - |
dc.contributor.author | Cho, Eunhee | - |
dc.contributor.author | Yang, Jee-Eun | - |
dc.contributor.author | Kim, Myoung-Ha | - |
dc.contributor.author | Lee, Minbaek | - |
dc.contributor.author | Lee, Byung Yang | - |
dc.contributor.author | Kwon, Soon Gu | - |
dc.contributor.author | Lee, Moon-Sook | - |
dc.contributor.author | Jo, Moon-Ho | - |
dc.contributor.author | Choi, Heon-Jin | - |
dc.contributor.author | Hyeon, Taeghwan | - |
dc.contributor.author | Hong, Seunghun | - |
dc.date.accessioned | 2020-04-27T13:26:56Z | - |
dc.date.available | 2020-04-27T13:26:56Z | - |
dc.date.created | 2020-03-18 | - |
dc.date.issued | 2008-12 | - |
dc.identifier.citation | Nano Letters, Vol.8 No.12, pp.4523-4527 | - |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.other | 92817 | - |
dc.identifier.uri | https://hdl.handle.net/10371/165872 | - |
dc.description.abstract | We present a method for assembling silicon nanowires (Si-NWs) in virtually general shape patterns using only conventional microfabrication facilities. In this method, silicon nanowires were functionalized with amine groups and dispersed in deionized water. The functionalized Si-NWs exhibited positive surface charges in the suspensions, and they were selectively adsorbed and aligned onto negatively charged surface regions on solid substrates. As a proof of concepts, we, demonstrated transistors based on individual Si-NWs and long networks of Si-NWs. | - |
dc.language | 영어 | - |
dc.publisher | American Chemical Society | - |
dc.title | Large-scale assembly of silicon nanowire network-based devices using conventional microfabrication facilities | - |
dc.type | Article | - |
dc.contributor.AlternativeAuthor | 홍승훈 | - |
dc.contributor.AlternativeAuthor | 현택환 | - |
dc.identifier.doi | 10.1021/nl802570m | - |
dc.citation.journaltitle | Nano Letters | - |
dc.identifier.wosid | 000261630700075 | - |
dc.identifier.scopusid | 2-s2.0-61649092562 | - |
dc.citation.endpage | 4527 | - |
dc.citation.number | 12 | - |
dc.citation.startpage | 4523 | - |
dc.citation.volume | 8 | - |
dc.identifier.sci | 000261630700075 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Hyeon, Taeghwan | - |
dc.contributor.affiliatedAuthor | Hong, Seunghun | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | CARBON NANOTUBES | - |
dc.subject.keywordPlus | GOLD ELECTRODE | - |
dc.subject.keywordPlus | 1/F NOISE | - |
dc.subject.keywordPlus | HETEROSTRUCTURES | - |
dc.subject.keywordPlus | SURFACE | - |
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