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Single-Gate Bandgap Opening of Bilayer Graphene by Dual Molecular Doping
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Park, Jaesung | - |
dc.contributor.author | Jo, Sae Byeok | - |
dc.contributor.author | Yu, Young-Jun | - |
dc.contributor.author | Kim, Youngsoo | - |
dc.contributor.author | Yang, Jae Won | - |
dc.contributor.author | Lee, Wi Hyoung | - |
dc.contributor.author | Kim, Hyun Ho | - |
dc.contributor.author | Hong, Byung Hee | - |
dc.contributor.author | Kim, Philip | - |
dc.contributor.author | Cho, Kilwon | - |
dc.contributor.author | Kim, Kwang S. | - |
dc.date.accessioned | 2021-01-31T08:28:16Z | - |
dc.date.available | 2021-01-31T08:28:16Z | - |
dc.date.created | 2020-08-11 | - |
dc.date.issued | 2012-01 | - |
dc.identifier.citation | Advanced Materials, Vol.24 No.3, pp.407-411 | - |
dc.identifier.issn | 0935-9648 | - |
dc.identifier.other | 110137 | - |
dc.identifier.uri | https://hdl.handle.net/10371/172148 | - |
dc.description.abstract | Dual doping-driven perpendicular electric field with opposite directions remarkably increase the on/off current ratio of bilayer graphene field-effect transistors. This unambiguously proves that it is possible to open a bandgap with two molecular dopants (F4-TCNQ and NH2-functionalized self-assembled monolayers (SAMs)) even in a single-gate device structure. | - |
dc.language | 영어 | - |
dc.publisher | WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim | - |
dc.title | Single-Gate Bandgap Opening of Bilayer Graphene by Dual Molecular Doping | - |
dc.type | Article | - |
dc.contributor.AlternativeAuthor | 홍병희 | - |
dc.identifier.doi | 10.1002/adma.201103411 | - |
dc.citation.journaltitle | Advanced Materials | - |
dc.identifier.wosid | 000298945100014 | - |
dc.identifier.scopusid | 2-s2.0-84862944245 | - |
dc.citation.endpage | 411 | - |
dc.citation.number | 3 | - |
dc.citation.startpage | 407 | - |
dc.citation.volume | 24 | - |
dc.identifier.sci | 000298945100014 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Hong, Byung Hee | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | SELF-ASSEMBLED MONOLAYERS | - |
dc.subject.keywordPlus | ELECTRONIC-STRUCTURE | - |
dc.subject.keywordPlus | EPITAXIAL GRAPHENE | - |
dc.subject.keywordPlus | ROOM-TEMPERATURE | - |
dc.subject.keywordPlus | TRANSPORT | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | CARBON | - |
dc.subject.keywordPlus | GAP | - |
dc.subject.keywordAuthor | bilayer graphene | - |
dc.subject.keywordAuthor | field-effect transistors | - |
dc.subject.keywordAuthor | molecular doping | - |
dc.subject.keywordAuthor | bandgap opening | - |
dc.subject.keywordAuthor | self-assembled monolayers | - |
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