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Work-Function Engineering of Graphene Electrodes by Self-Assembled Monolayers for High-Performance Organic Field-Effect Transistors
Cited 187 time in
Web of Science
Cited 188 time in Scopus
- Authors
- Issue Date
- 2011-04
- Publisher
- American Chemical Society
- Citation
- Journal of Physical Chemistry Letters, Vol.2 No.8, pp.841-845
- Abstract
- We have devised a method to optimize the performance of organic field-effect transistors (OFETs) by controlling the work functions of graphene electrodes by functionalizing the surface of SiO(2) substrates with self-assembled monolayers (SAMs). The electron-donating NH(2)-terminated SAMs induce strong n-doping in graphene, whereas the CH(3)-terminated SAMs neutralize the p-doping induced by SiO(2) substrates, resulting in considerable changes in the work functions of graphene electrodes. This approach was successfully utilized to optimize electrical properties of graphene field-effect transistors and organic electronic devices using graphene electrodes. Considering the patternability and robustness of SAMs, this method would find numerous applications in graphene-based organic electronics and optoelectronic devices such as organic light-emitting diodes and organic photovoltaic devices.
- ISSN
- 1948-7185
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