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High-Performance Flexible Graphene Field Effect Transistors with Ion Gel Gate Dielectrics
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Kim, Beom Joon | - |
dc.contributor.author | Jang, Houk | - |
dc.contributor.author | Lee, Seoung-Ki | - |
dc.contributor.author | Hong, Byung Hee | - |
dc.contributor.author | Ahn, Jong-Hyun | - |
dc.contributor.author | Cho, Jeong Ho | - |
dc.date.accessioned | 2021-01-31T08:32:28Z | - |
dc.date.available | 2021-01-31T08:32:28Z | - |
dc.date.created | 2020-12-11 | - |
dc.date.issued | 2010-09 | - |
dc.identifier.citation | Nano Letters, Vol.10 No.9, pp.3464-3466 | - |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.other | 119027 | - |
dc.identifier.uri | https://hdl.handle.net/10371/172217 | - |
dc.description.abstract | A high-performance low-voltage graphene field-effect transistor (FED array was fabricated on a flexible polymer substrate using solution-processable, high-capacitance ion gel gate dielectrics. The high capacitance of the ion gel, which originated from the formation of an electric double layer under the application of a gate voltage, yielded a high on-current and low voltage operation below 3 V. The graphene FETs fabricated on the plastic substrates showed a hole and electron mobility of 203 +/- 57 and 91 +/- 50 cm(2)/(V.s), respectively, at a drain bias of - I V. Moreover, ion gel gated graphene FETs on the plastic substrates exhibited remarkably good mechanical flexibility. This method represents a significant step in the application of graphene to flexible and stretchable electronics. | - |
dc.language | 영어 | - |
dc.publisher | American Chemical Society | - |
dc.title | High-Performance Flexible Graphene Field Effect Transistors with Ion Gel Gate Dielectrics | - |
dc.type | Article | - |
dc.contributor.AlternativeAuthor | 홍병희 | - |
dc.identifier.doi | 10.1021/nl101559n | - |
dc.citation.journaltitle | Nano Letters | - |
dc.identifier.wosid | 000281498200041 | - |
dc.identifier.scopusid | 2-s2.0-77956434425 | - |
dc.citation.endpage | 3466 | - |
dc.citation.number | 9 | - |
dc.citation.startpage | 3464 | - |
dc.citation.volume | 10 | - |
dc.identifier.sci | 000281498200041 | - |
dc.description.isOpenAccess | Y | - |
dc.contributor.affiliatedAuthor | Hong, Byung Hee | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | THIN-FILM TRANSISTORS | - |
dc.subject.keywordPlus | CAPACITANCE | - |
dc.subject.keywordAuthor | Graphene | - |
dc.subject.keywordAuthor | ion gel | - |
dc.subject.keywordAuthor | flexible electronics | - |
dc.subject.keywordAuthor | field effect transistor | - |
dc.subject.keywordAuthor | low-voltage operation | - |
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