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Stable n-type doping of graphene via high-molecular-weight ethylene amines
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jo, Insu | - |
dc.contributor.author | Kim, Youngsoo | - |
dc.contributor.author | Moon, Joonhee | - |
dc.contributor.author | Park, Subeom | - |
dc.contributor.author | Moon, Jin San | - |
dc.contributor.author | Park, Won Bae | - |
dc.contributor.author | Lee, Jeong Soo | - |
dc.contributor.author | Hong, Byung Hee | - |
dc.date.accessioned | 2021-01-31T08:35:29Z | - |
dc.date.available | 2021-01-31T08:35:29Z | - |
dc.date.created | 2018-08-29 | - |
dc.date.issued | 2015-11 | - |
dc.identifier.citation | Physical Chemistry Chemical Physics, Vol.17 No.44, pp.29492-29495 | - |
dc.identifier.issn | 1463-9076 | - |
dc.identifier.other | 47965 | - |
dc.identifier.uri | https://hdl.handle.net/10371/172267 | - |
dc.description.abstract | We demonstrate a stable and strong n-type doping method to tune the electrical properties of graphene via vapor phase chemical doping with various high-molecular-weight ethylene amines. The resulting carrier concentration after doping with pentaethylenehexamine (PEHA) is as high as -1.01 x 10(13) cm(-2), which reduces the sheet resistance of graphene by up to similar to 400% compared to pristine graphene. Our study suggests that the branched structure of the dopant molecules is another important factor that determines the actual doping degree of graphene. | - |
dc.language | 영어 | - |
dc.publisher | Royal Society of Chemistry | - |
dc.title | Stable n-type doping of graphene via high-molecular-weight ethylene amines | - |
dc.type | Article | - |
dc.contributor.AlternativeAuthor | 홍병희 | - |
dc.identifier.doi | 10.1039/c5cp03196f | - |
dc.citation.journaltitle | Physical Chemistry Chemical Physics | - |
dc.identifier.wosid | 000364639700007 | - |
dc.identifier.scopusid | 2-s2.0-84946762350 | - |
dc.citation.endpage | 29495 | - |
dc.citation.number | 44 | - |
dc.citation.startpage | 29492 | - |
dc.citation.volume | 17 | - |
dc.identifier.sci | 000364639700007 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Hong, Byung Hee | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | FIELD-EFFECT TRANSISTORS | - |
dc.subject.keywordPlus | TRANSPARENT ELECTRODES | - |
dc.subject.keywordPlus | HIGH-QUALITY | - |
dc.subject.keywordPlus | FILMS | - |
dc.subject.keywordPlus | PHASE | - |
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