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Threshold Voltage Control of Multilayered MoS2 Field-Effect Transistors via Octadecyltrichlorosilane and their Applications to Active Matrixed Quantum Dot Displays Driven by Enhancement-Mode Logic Gates
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Roh, Jeongkyun | - |
dc.contributor.author | Ryu, Jae Hyeon | - |
dc.contributor.author | Baek, Geun Woo | - |
dc.contributor.author | Jung, Heeyoung | - |
dc.contributor.author | Seo, Seung Gi | - |
dc.contributor.author | An, Kunsik | - |
dc.contributor.author | Jeong, Byeong Guk | - |
dc.contributor.author | Lee, Doh C. | - |
dc.contributor.author | Hong, Byung Hee | - |
dc.contributor.author | Bae, Wan Ki | - |
dc.contributor.author | Lee, Jong-Ho | - |
dc.contributor.author | Lee, Changhee | - |
dc.contributor.author | Jin, Sung Hun | - |
dc.date.accessioned | 2021-01-31T08:36:28Z | - |
dc.date.available | 2021-01-31T08:36:28Z | - |
dc.date.created | 2020-02-17 | - |
dc.date.created | 2020-02-17 | - |
dc.date.created | 2020-02-17 | - |
dc.date.issued | 2019-02 | - |
dc.identifier.citation | Small, Vol.15 No.7, p. 1803852 | - |
dc.identifier.issn | 1613-6810 | - |
dc.identifier.other | 91407 | - |
dc.identifier.uri | https://hdl.handle.net/10371/172284 | - |
dc.description.abstract | In recent past, for next-generation device opportunities such as sub-10 nm channel field-effect transistors (FETs), tunneling FETs, and high-end display backplanes, tremendous research on multilayered molybdenum disulfide (MoS2) among transition metal dichalcogenides has been actively performed. However, nonavailability on a matured threshold voltage control scheme, like a substitutional doping in Si technology, has been plagued for the prosperity of 2D materials in electronics. Herein, an adjustment scheme for threshold voltage of MoS2 FETs by using self-assembled monolayer treatment via octadecyltrichlorosilane is proposed and demonstrated to show MoS2 FETs in an enhancement mode with preservation of electrical parameters such as field-effect mobility, subthreshold swing, and current on-off ratio. Furthermore, the mechanisms for threshold voltage adjustment are systematically studied by using atomic force microscopy, Raman, temperature-dependent electrical characterization, etc. For validation of effects of threshold voltage engineering on MoS2 FETs, full swing inverters, comprising enhancement mode drivers and depletion mode loads are perfectly demonstrated with a maximum gain of 18.2 and a noise margin of approximate to 45% of 1/2 V-DD. More impressively, quantum dot light-emitting diodes, driven by enhancement mode MoS2 FETs, stably demonstrate 120 cd m(-2) at the gate-to-source voltage of 5 V, exhibiting promising opportunities for future display application. | - |
dc.language | 영어 | - |
dc.publisher | Wiley - V C H Verlag GmbbH & Co. | - |
dc.title | Threshold Voltage Control of Multilayered MoS2 Field-Effect Transistors via Octadecyltrichlorosilane and their Applications to Active Matrixed Quantum Dot Displays Driven by Enhancement-Mode Logic Gates | - |
dc.type | Article | - |
dc.contributor.AlternativeAuthor | 홍병희 | - |
dc.identifier.doi | 10.1002/smll.201803852 | - |
dc.citation.journaltitle | Small | - |
dc.identifier.wosid | 000459722300001 | - |
dc.identifier.scopusid | 2-s2.0-85059962458 | - |
dc.citation.number | 7 | - |
dc.citation.startpage | 1803852 | - |
dc.citation.volume | 15 | - |
dc.identifier.sci | 000459722300001 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Hong, Byung Hee | - |
dc.contributor.affiliatedAuthor | Lee, Jong-Ho | - |
dc.contributor.affiliatedAuthor | Lee, Changhee | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | SELF-ASSEMBLED MONOLAYERS | - |
dc.subject.keywordPlus | LAYER MOS2 | - |
dc.subject.keywordPlus | ORGANIC TRANSISTORS | - |
dc.subject.keywordPlus | GLASS | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | TRANSPARENT | - |
dc.subject.keywordPlus | PASSIVATION | - |
dc.subject.keywordPlus | PERFORMANCE | - |
dc.subject.keywordPlus | CIRCUITS | - |
dc.subject.keywordPlus | DEVICES | - |
dc.subject.keywordAuthor | field-effect transistors | - |
dc.subject.keywordAuthor | logic gate | - |
dc.subject.keywordAuthor | MoS2 | - |
dc.subject.keywordAuthor | quantum-dot light-emitting diode | - |
dc.subject.keywordAuthor | threshold voltage control | - |
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