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alpha-Gallium Oxide Films on Microcavity-Embedded Sapphire Substrates Grown by Mist Chemical Vapor Deposition for High-Breakdown Voltage Schottky Diodes
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yang, Duyoung | - |
dc.contributor.author | Kim, Byungsoo | - |
dc.contributor.author | Oh, Jehong | - |
dc.contributor.author | Lee, Tae Hyung | - |
dc.contributor.author | Ryu, Jungel | - |
dc.contributor.author | Park, Sohyeon | - |
dc.contributor.author | Kim, Seungsoo | - |
dc.contributor.author | Yoon, Euijoon | - |
dc.contributor.author | Park, Yongjo | - |
dc.contributor.author | Jang, Ho Won | - |
dc.date.accessioned | 2022-05-04T01:50:06Z | - |
dc.date.available | 2022-05-04T01:50:06Z | - |
dc.date.created | 2022-03-28 | - |
dc.date.issued | 2022-02 | - |
dc.identifier.citation | ACS Applied Materials and Interfaces, Vol.14 No.4, pp.5598-5607 | - |
dc.identifier.issn | 1944-8244 | - |
dc.identifier.uri | https://hdl.handle.net/10371/179453 | - |
dc.description.abstract | alpha-Gallium oxide, with its large band gap energy, is a promising material for utilization in power devices. Sapphire, which has the same crystal structure as alpha-Ga2O3, has been used as a substrate for alpha-Ga2O3 epitaxial growth. However, lattice and thermal expansion coefficient mismatches generate a high density of threading dislocations (TDs) and cracks in films. Here, we demonstrated the growth of alpha-Ga2O3 films with reduced TD density and residual stress on microcavity-embedded sapphire substrates (MESS). We fabricated the two types of substrates with microcavities: diameters of 1.5 and 2.2 mu m, respectively. We confirmed that round conical-shaped cavities with smaller diameters are beneficial for the lateral overgrowth of alpha-Ga2O3 crystals with lower TD densities by mist chemical vapor deposition. We could obtain crack-free high-crystallinity alpha-Ga2O3 films on MESS, while the direct growth on a bare sapphire substrate resulted in an alpha-Ga2O3 film with a number of cracks. TD densities of alpha-Ga2O3 films on MESS with 1.5 and 2.2 mu m cavities were measured to be 1.77 and 6.47 x 10(8) cm(-2), respectively. Furthermore, cavities in MESS were certified to mitigate the residual stress via the redshifted Raman peaks of alpha-Ga2O3 films. Finally, we fabricated Schottky diodes based on alpha-Ga2O3 films grown on MESS with 1.5 and 2.2 mu m cavities, which exhibited high breakdown voltages of 679 and 532 V, respectively. This research paves the way to fabricating Schottky diodes with high breakdown voltages based on high-quality alpha-Ga2O3 films. | - |
dc.language | 영어 | - |
dc.publisher | American Chemical Society | - |
dc.title | alpha-Gallium Oxide Films on Microcavity-Embedded Sapphire Substrates Grown by Mist Chemical Vapor Deposition for High-Breakdown Voltage Schottky Diodes | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/acsami.1c21845 | - |
dc.citation.journaltitle | ACS Applied Materials and Interfaces | - |
dc.identifier.wosid | 000768792500074 | - |
dc.identifier.scopusid | 2-s2.0-85123912408 | - |
dc.citation.endpage | 5607 | - |
dc.citation.number | 4 | - |
dc.citation.startpage | 5598 | - |
dc.citation.volume | 14 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Jang, Ho Won | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
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