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Damage-Induced Ferroelectricity in HfOx-Based Thin Film
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Min, Kyung Kyu | - |
dc.contributor.author | Kim, Hyun-Min | - |
dc.contributor.author | Kim, Yeonwoo | - |
dc.contributor.author | Kim, Changha | - |
dc.contributor.author | Yu, Junsu | - |
dc.contributor.author | Lee, Jong-Ho | - |
dc.contributor.author | Park, Byung-Gook | - |
dc.contributor.author | Kwon, Daewoong | - |
dc.date.accessioned | 2022-06-21T08:21:36Z | - |
dc.date.available | 2022-06-21T08:21:36Z | - |
dc.date.created | 2022-05-24 | - |
dc.date.issued | 2022-05 | - |
dc.identifier.citation | IEEE Electron Device Letters, Vol.43 No.5, pp.713-716 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://hdl.handle.net/10371/182678 | - |
dc.description.abstract | In the last decade, a surge in research on hafnium oxide (HfOx)-based ferroelectricity has become a significant part of the semiconductor research trend. In this work, we present a new factor, that is, process damage to the HfOx-based ferroelectric implementation. By reversely exploiting harmful damage in the metaloxide-semiconductor process, the ferroelectricity in HfOx is improved by eliciting early amorphization suitable for orthorhombic phase formation. In addition, through various pulsed polarization measurements, it is found that the damaged HfOx film has a fast polarization switching speed, with an initial pinning site that is suitable for domain wall growth motion; advantageous for high-performance memory applications. | - |
dc.language | 영어 | - |
dc.publisher | Institute of Electrical and Electronics Engineers | - |
dc.title | Damage-Induced Ferroelectricity in HfOx-Based Thin Film | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/LED.2022.3162888 | - |
dc.citation.journaltitle | IEEE Electron Device Letters | - |
dc.identifier.wosid | 000794239500015 | - |
dc.identifier.scopusid | 2-s2.0-85127473762 | - |
dc.citation.endpage | 716 | - |
dc.citation.number | 5 | - |
dc.citation.startpage | 713 | - |
dc.citation.volume | 43 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Park, Byung-Gook | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
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