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Development of a Photonic Switch via Electro-Capillarity-Induced Water Penetration Across a 10-nm Gap

DC Field Value Language
dc.contributor.authorYu, Eui-Sang-
dc.contributor.authorChae, Kyomin-
dc.contributor.authorKim, Taehyun-
dc.contributor.authorLee, Jongsu-
dc.contributor.authorSeo, Jungmok-
dc.contributor.authorKim, In Soo-
dc.contributor.authorChung, Aram J.-
dc.contributor.authorLee, Sin-Doo-
dc.contributor.authorRyu, Yong-Sang-
dc.date.accessioned2022-06-23T04:46:29Z-
dc.date.available2022-06-23T04:46:29Z-
dc.date.created2022-05-09-
dc.date.issued2022-04-
dc.identifier.citationSmall, Vol.18 No.14, p. 2107060-
dc.identifier.issn1613-6810-
dc.identifier.urihttps://hdl.handle.net/10371/183709-
dc.description.abstractWith narrow and dense nanoarchitectures increasingly adopted to improve optical functionality, achieving the complete wetting of photonic devices is required when aiming at underwater molecule detection over the water-repellent optical materials. Despite continuous advances in photonic applications, real-time monitoring of nanoscale wetting transitions across nanostructures with 10-nm gaps, the distance at which photonic performance is maximized, remains a chronic hurdle when attempting to quantify the water influx and molecules therein. For this reason, the present study develops a photonic switch that transforms the wetting transition into perceivable color changes using a liquid-permeable Fabry-Perot resonator. Electro-capillary-induced Cassie-to-Wenzel transitions produce an optical memory effect in the photonic switch, as confirmed by surface-energy analysis, simulations, and an experimental demonstration. The results show that controlling the wetting behavior using the proposed photonic switch is a promising strategy for the integration of aqueous media with photonic hotspots in plasmonic nanostructures such as biochemical sensors.-
dc.language영어-
dc.publisherWiley - V C H Verlag GmbbH & Co.-
dc.titleDevelopment of a Photonic Switch via Electro-Capillarity-Induced Water Penetration Across a 10-nm Gap-
dc.typeArticle-
dc.identifier.doi10.1002/smll.202107060-
dc.citation.journaltitleSmall-
dc.identifier.wosid000758091100001-
dc.identifier.scopusid2-s2.0-85124891318-
dc.citation.number14-
dc.citation.startpage2107060-
dc.citation.volume18-
dc.description.isOpenAccessN-
dc.contributor.affiliatedAuthorLee, Sin-Doo-
dc.type.docTypeArticle-
dc.description.journalClass1-
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