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Investigation of Low-Frequency Noise Characteristics of Ferroelectric Tunnel Junction: From Conduction Mechanism and Scaling Perspectives
Cited 12 time in
Web of Science
Cited 13 time in Scopus
- Authors
- Issue Date
- 2022-06
- Citation
- IEEE Electron Device Letters, Vol.43 No.6, pp.958-961
- Abstract
- We investigate the effects of length (L) and width (W) scaling on the low-frequency noise characteristics of the ferroelectric tunnel junction (FTJ). The FTJ is composed of metal/ferroelectric/dielectric/semiconductor (TiN/HfZrO2/SiO2/n(+) Si). In the high-resistance state, 1/f noise increases proportionally to 1/(WL beta)-L-alpha(alpha congruent to 1, beta > 1), whereas the shot noise has no scaling dependence. In the low-resistance state, the 1/f noise of the FTJ shows a more sensitive dependence on L scaling than W scaling since the switching and conduction mechanisms are more affected by the process-induced damaged edge regions.
- ISSN
- 0741-3106
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