Compact Model of Read Disturbance by Hot Carrier Injection in 3D NAND Flash Memory

Abstract

In this paper, we analyzed and modeled read disturbance phenomenon by hot carrier injection in 3D NAND Flash Memory using lucky electron model. The maximum electric field between selected cell and unselected cell, band to band tunneling, and impact ionization generation rate were represented with simple equations and applied to proposed hot carrier injection current model. Also, our models take into account the change of electric potential due to hole accumulation during read operation. Proposed models show good agreement with TCAD simulation results.