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Influence of Etch Profiles on the Leakage Current and Capacitance of 3-D DRAM Storage Capacitors
Cited 4 time in
Web of Science
Cited 4 time in Scopus
- Authors
- Issue Date
- 2019-04
- Publisher
- 대한전자공학회
- Citation
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, Vol.19 No.2, pp.208-213
- Abstract
- The influence of etch profiles on leakage current and capacitance of three-dimensional (3-D) dynamic random access memory (DRAM) storage capacitors is investigated by using full 3-D technology computer-aided design (TCAD) simulation. According to the simulation results calibrated by experimental data, as the ratio of bottom critical dimension (CDBOT) to top critical dimension (CDTOP) of a DRAM storage capacitor decreases, storage capacitance (C-s) decreases while leakage current (I-leak) increases. Thus, it is important to achieve steep etch profiles during the fabrication of DRAM storage capacitors for higher DRAM capacity and longer refresh time.
- ISSN
- 1598-1657
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