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On-current Modeling of 70-nm PMOSFETs Dependent on Hot-carrier Stress Bias Conditions
Cited 1 time in
Web of Science
Cited 2 time in Scopus
- Authors
- Issue Date
- 2018-04
- Publisher
- 대한전자공학회
- Citation
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, Vol.18 No.2, pp.131-138
- Abstract
- Based on the drain-avalanche-hot-carrier (DAHC-) mechanism, a stress-bias-dependent on-current model is proposed for 70-nm p-channel metal-oxide-semiconductor field-effect transistors (PMOSFETs) by using only one device parameter: channel length variation (Delta L-ch). The proposed model describes the influence of drain and gate stress bias on the on-current of PMOSFETs successfully. It is a simple and effective method of predicting the on-current variation for more reliable circuit operation.
- ISSN
- 1598-1657
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