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Triple-gate Tunnel FETs Encapsulated with an Epitaxial Layer for High Current Drivability
Cited 6 time in
Web of Science
Cited 8 time in Scopus
- Authors
- Issue Date
- 2017-04
- Publisher
- 대한전자공학회
- Citation
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, Vol.17 No.2, pp.271-276
- Abstract
- The triple-gate tunnel FETs encapsulated with an epitaxial layer (EL TFETs) is proposed to lower the subthreshold swing of the TFETs. Furthermore, the band-to-band tunneling based on the maximum electric-field can occur thanks to the epitaxial layer wrapping the Si fin. The performance and mechanism of the EL TFETs are compared with the previously proposed TFET based on simulation.
- ISSN
- 1598-1657
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