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Drain-current Modeling of Sub-70-nm PMOSFETs Dependent on Hot- carrier Stress Bias Conditions
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Lim, In Eui | - |
dc.contributor.author | Jhon, Heesauk | - |
dc.contributor.author | Yoon, Gyuhan | - |
dc.contributor.author | Choi, Woo Young | - |
dc.date.accessioned | 2022-10-26T07:21:24Z | - |
dc.date.available | 2022-10-26T07:21:24Z | - |
dc.date.created | 2022-10-20 | - |
dc.date.issued | 2017-02 | - |
dc.identifier.citation | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, Vol.17 No.1, pp.94-100 | - |
dc.identifier.issn | 1598-1657 | - |
dc.identifier.uri | https://hdl.handle.net/10371/186777 | - |
dc.description.abstract | Stress drain bias dependent current model is proposed for sub-70-nm p-channel metal-oxide semiconductor field-effect transistors (pMOSFETs) under drain-avalanche-hot-carrier (DAHC-) mechanism. The proposed model describes the both on-current and off-current degradation by using two device parameters: channel length variation (triangle L-ch) and threshold voltage shift (triangle V-th). Also, it is a simple and effective model of predicting reliable circuit operation and standby power consumption. | - |
dc.language | 영어 | - |
dc.publisher | 대한전자공학회 | - |
dc.title | Drain-current Modeling of Sub-70-nm PMOSFETs Dependent on Hot- carrier Stress Bias Conditions | - |
dc.type | Article | - |
dc.identifier.doi | 10.5573/JSTS.2017.17.1.094 | - |
dc.citation.journaltitle | JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE | - |
dc.identifier.wosid | 000397303700013 | - |
dc.identifier.scopusid | 2-s2.0-85014736210 | - |
dc.citation.endpage | 100 | - |
dc.citation.number | 1 | - |
dc.citation.startpage | 94 | - |
dc.citation.volume | 17 | - |
dc.identifier.kciid | ART002199952 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Choi, Woo Young | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
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