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Esaki-Tunneling-Assisted Tunnel Field-Effect Transistors for Sub-0.7-V Operation
DC Field | Value | Language |
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dc.contributor.author | Park, Jong Han | - |
dc.contributor.author | Choi, Woo Young | - |
dc.date.accessioned | 2022-10-26T07:21:27Z | - |
dc.date.available | 2022-10-26T07:21:27Z | - |
dc.date.created | 2022-10-20 | - |
dc.date.issued | 2016-10 | - |
dc.identifier.citation | Journal of Nanoscience and Nanotechnology, Vol.16 No.10, pp.10237-10240 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | https://hdl.handle.net/10371/186781 | - |
dc.description.abstract | Esaki-tunneling-assisted tunnel field-effect transistors (ETFETs) have been proposed which feature Esaki tunneling at drain-to-base junctions. They have shown lower subthreshold swing (SS) and higher on-current (I-on) than conventional TFETs, which means that ETFETs are attractive solutions to sub-0.7-V operation. It is because the Zener tunneling current induced by the source-to-channel junction is amplified by the embedded heterojunction bipolar transistor (HBT) whose emitter injection is assisted by Esaki tunneling. | - |
dc.language | 영어 | - |
dc.publisher | American Scientific Publishers | - |
dc.title | Esaki-Tunneling-Assisted Tunnel Field-Effect Transistors for Sub-0.7-V Operation | - |
dc.type | Article | - |
dc.identifier.doi | 10.1166/jnn.2016.13134 | - |
dc.citation.journaltitle | Journal of Nanoscience and Nanotechnology | - |
dc.identifier.wosid | 000387100600013 | - |
dc.identifier.scopusid | 2-s2.0-84990987667 | - |
dc.citation.endpage | 10240 | - |
dc.citation.number | 10 | - |
dc.citation.startpage | 10237 | - |
dc.citation.volume | 16 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Choi, Woo Young | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
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