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Multi-Bit Nano-Electromechanical Nonvolatile Memory Cells (Zigzag T Cells) for the Suppression of Bit-to-Bit Interference
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Woo Young | - |
dc.contributor.author | Han, Jae Hwan | - |
dc.contributor.author | Cha, Tae Min | - |
dc.date.accessioned | 2022-10-26T07:21:32Z | - |
dc.date.available | 2022-10-26T07:21:32Z | - |
dc.date.created | 2022-10-20 | - |
dc.date.issued | 2016-05 | - |
dc.identifier.citation | Journal of Nanoscience and Nanotechnology, Vol.16 No.5, pp.5164-5167 | - |
dc.identifier.issn | 1533-4880 | - |
dc.identifier.uri | https://hdl.handle.net/10371/186787 | - |
dc.description.abstract | Multi-bit nano-electromechanical (NEM) nonvolatile memory cells such as T cells were proposed for higher memory density. However, they suffered from bit-to-bit interference (BI). In order to suppress BI without sacrificing cell size, this paper proposes zigzag T cell structures. The BI suppression of the proposed zigzag T cell is verified by finite-element modeling (FEM). Based on the FEM results, the design of zigzag T cells is optimized. | - |
dc.language | 영어 | - |
dc.publisher | American Scientific Publishers | - |
dc.title | Multi-Bit Nano-Electromechanical Nonvolatile Memory Cells (Zigzag T Cells) for the Suppression of Bit-to-Bit Interference | - |
dc.type | Article | - |
dc.identifier.doi | 10.1166/jnn.2016.12249 | - |
dc.citation.journaltitle | Journal of Nanoscience and Nanotechnology | - |
dc.identifier.wosid | 000386123100149 | - |
dc.identifier.scopusid | 2-s2.0-84971497608 | - |
dc.citation.endpage | 5167 | - |
dc.citation.number | 5 | - |
dc.citation.startpage | 5164 | - |
dc.citation.volume | 16 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Choi, Woo Young | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
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