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Three-Dimensional Integration of Complementary Metal-Oxide-Semiconductor-Nanoelectromechanical Hybrid Reconfigurable Circuits
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Choi, Woo Young | - |
dc.contributor.author | Kim, Yong Jun | - |
dc.date.accessioned | 2022-10-26T07:21:36Z | - |
dc.date.available | 2022-10-26T07:21:36Z | - |
dc.date.created | 2022-10-20 | - |
dc.date.issued | 2015-09 | - |
dc.identifier.citation | IEEE Electron Device Letters, Vol.36 No.9, pp.887-889 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://hdl.handle.net/10371/186793 | - |
dc.description.abstract | Complementary-metal-oxide-semiconductor (CMOS) and nanoelectromechanical (NEM) hybrid reconfigurable circuits are implemented for the first time using three-dimensional (3D) integration process. In addition, their operation is confirmed experimentally. For the fabrication of the 3D CMOS-NEM hybrid reconfigurable circuits, only the standard CMOS baseline process has been used except for the hydrofluoric acid vapor etch to release the NEM structures and focused-ion-beam patterning to define small patterns. | - |
dc.language | 영어 | - |
dc.publisher | Institute of Electrical and Electronics Engineers | - |
dc.title | Three-Dimensional Integration of Complementary Metal-Oxide-Semiconductor-Nanoelectromechanical Hybrid Reconfigurable Circuits | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/LED.2015.2455556 | - |
dc.citation.journaltitle | IEEE Electron Device Letters | - |
dc.identifier.wosid | 000360273900005 | - |
dc.identifier.scopusid | 2-s2.0-84940382654 | - |
dc.citation.endpage | 889 | - |
dc.citation.number | 9 | - |
dc.citation.startpage | 887 | - |
dc.citation.volume | 36 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Choi, Woo Young | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
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