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Influence of Fringe Field on Nano-Electromechanical (NEM) Memory Cells
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Han, Boram | - |
| dc.contributor.author | Song, Ji Yong | - |
| dc.contributor.author | Choi, Woo Young | - |
| dc.date.accessioned | 2022-10-26T07:21:41Z | - |
| dc.date.available | 2022-10-26T07:21:41Z | - |
| dc.date.created | 2022-10-20 | - |
| dc.date.issued | 2014-11 | - |
| dc.identifier.citation | IEEE Transactions on Nanotechnology, Vol.13 No.6, pp.1102-1106 | - |
| dc.identifier.issn | 1536-125X | - |
| dc.identifier.uri | https://hdl.handle.net/10371/186800 | - |
| dc.description.abstract | The influence of fringe field on nano-electromechanical (NEM) memory cells has been investigated. Because fringe field effects become stronger with cells scaling down, it becomes more difficult to predict the characteristics of small-sized NEM memory cells accurately. In this paper, fringe field effects have been included into a finite-element model. The dependence of fringe field effects on cell parameters has also been evaluated. | - |
| dc.language | 영어 | - |
| dc.publisher | Institute of Electrical and Electronics Engineers | - |
| dc.title | Influence of Fringe Field on Nano-Electromechanical (NEM) Memory Cells | - |
| dc.type | Article | - |
| dc.identifier.doi | 10.1109/TNANO.2013.2294892 | - |
| dc.citation.journaltitle | IEEE Transactions on Nanotechnology | - |
| dc.identifier.wosid | 000345087900012 | - |
| dc.identifier.scopusid | 2-s2.0-84910672320 | - |
| dc.citation.endpage | 1106 | - |
| dc.citation.number | 6 | - |
| dc.citation.startpage | 1102 | - |
| dc.citation.volume | 13 | - |
| dc.description.isOpenAccess | N | - |
| dc.contributor.affiliatedAuthor | Choi, Woo Young | - |
| dc.type.docType | Article | - |
| dc.description.journalClass | 1 | - |
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