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Fringe Field Effects on Transient Characteristics of Nano-Electromechanical (NEM) Nonvolatile Memory Cells
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- Authors
- Issue Date
- 2014-10
- Publisher
- 대한전자공학회
- Citation
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, Vol.14 No.5, pp.609-614
- Abstract
- The fringe field effects on the transient characteristics of nano-electromechanical (NEM) memory cells have been discussed by using an analytical model. The influence of fringe field becomes stronger as the size of a cell decreases. By using the proposed model, the dependency of NEM memory transient characteristics on cell parameters has been evaluated.
- ISSN
- 1598-1657
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