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Linearity of Hetero-Gate-Dielectric Tunneling Field-Effect Transistors
Cited 7 time in
Web of Science
Cited 8 time in Scopus
- Authors
- Issue Date
- 2013-12
- Publisher
- 대한전자공학회
- Citation
- JOURNAL OF SEMICONDUCTOR TECHNOLOGY AND SCIENCE, Vol.13 No.6, pp.551-555
- Abstract
- Linearity characteristics of hetero-gate-dielectric tunneling field-effect transistors (HG TFETs) have been compared with those of high-k-only and SiO2-only TFETs in terms of IIP3 and P1dB. It has been observed that the optimized HG TFETs have higher IIP3 and P1dB than high-k-only and SiO2-only TFETs. It is because HG TFETs show higher transconductance (g(m)) and current drivability than SiO2-only TFETs and g(m) less sensitive to gate voltage than high-k-only TFETs.
- ISSN
- 1598-1657
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