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Active Region Formation of Nanoelectromechanical (NEM) Devices for Complementary-Metal-Oxide-Semiconductor-NEM Co-Integration
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- Authors
- Issue Date
- 2019-10
- Publisher
- American Scientific Publishers
- Citation
- Journal of Nanoscience and Nanotechnology, Vol.19 No.10, pp.6123-6127
- Abstract
- Considering the isotropic release process for nanoelectromechanical (NEM) devices, defining the specific sacrificial layer of the inter-metal-dielectric (IMD), i.e., the active region only for NEM devices, is one of the most important issue for complementary-metal-oxide-semiconductor-NEM (CMOS-NEM) co-integrated circuits. In this paper, novel fabrication method to define the active region of NEM devices is proposed by forming the trenched mesa-shape pattern in the IMD and depositing aluminum oxide (Al2O3) protecting layer. By applying the proposed process, the void space for mechanical operation of NEM devices can be formed user-controllably without the damage and collapse of CMOS part located below the NEM part. The feasibility of the proposed process is verified by fabricating and measuring the proof-of-concept prototype consists of the aluminum (Al) interconnects, silicon dioxide (SiO2) IMD and NEM memory switches.
- ISSN
- 1533-4880
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