Modeling of Trenched Coplanar Waveguide for Redistribution Layer of RF MEMS Switch Applications

Abstract

This paper presents a modeling of trenched coplanar waveguide (TCPW) for redistribution layer (RDL) and RF MEMS switch which is flip-chip bonded to RDL. RF MEMS switch have been developed for its excellent characteristics and is integrated with ICs for mobile phone applications, which requires new modeling of heterogeneous multi-chip integration. An RLC lumped element model of the RF MEMS switch was extracted from the measurement results of commercially available switch from DC to 10GHz. Then the modeling of the TCPW were carried out and both modeling of MEMS switches and TCPW were combined. We studied different substrates with different geometry to get comparable characteristic from silicon substrate which has high dielectric constant to currently used substrate such as Duroid. We found that 50um trenched CPW on a 1um thick silicon dioxide on a HRS substrate of RDL showed the highest performance.