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Content-Addressable Memory System Using a Nanoelectromechanical Memory Switch
Cited 2 time in
Web of Science
Cited 3 time in Scopus
- Authors
- Issue Date
- 2022-02
- Publisher
- MDPI AG
- Citation
- Electronics (Basel), Vol.11 No.3, p. 481
- Abstract
- Content-addressable memory (CAM) performs a parallel search operation by comparing the search data with all content stored in memory during a single cycle, instead of finding the data using an address. Conventional CAM designs use a dynamic CMOS architecture for high matching speed and high density; however, such implementations require the use of system clocks, and thus, suffer from timing violations and design limitations, such as charge sharing. In this paper, we propose a static-based architecture for a low-power, high-speed binary CAM (BCAM) and ternary CAM (TCAM), using a nanoelectromechanical (NEM) memory switch for nonvolatile data storage. We designed the proposed CAM architectures on a 65 nm process node with a 1.2 V operating voltage. The results of the layout simulation show that the proposed design has up to 23% less propagation delay, three times less matching power, and 9.4 times less area than a conventional design.
- ISSN
- 2079-9292
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