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Multi-Layer Nanoelectromechanical (NEM) Memory Switches for Multi-Path Routing

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dc.contributor.authorYoon, Jisoo-
dc.contributor.authorKwon, Hyug Su-
dc.contributor.authorChoi, Woo Young-
dc.date.accessioned2022-10-26T07:22:51Z-
dc.date.available2022-10-26T07:22:51Z-
dc.date.created2022-10-19-
dc.date.issued2022-01-
dc.identifier.citationIEEE Electron Device Letters, Vol.43 No.1, pp.162-165-
dc.identifier.issn0741-3106-
dc.identifier.urihttps://hdl.handle.net/10371/186900-
dc.description.abstractMonolithic three-dimensional (M3D) multilayer nanoelectromechanical (NEM) memory switches are experimentally demonstrated for reconfigurable multi-path routing. The multi-layer NEM memory switch has moving mechanical beams in different metal layers which operate independently in a nonvolatile manner, including high impedance states. For example, double-layer NEM memory switches implement nine different memory states. It is predicted that our proposed n-layer NEM memory switches utilizing n metal layers will exhibit 3((n-1)) x higher routing flexibility and nx higher chip density than conventional single-layer NEM memory switches.-
dc.language영어-
dc.publisherInstitute of Electrical and Electronics Engineers-
dc.titleMulti-Layer Nanoelectromechanical (NEM) Memory Switches for Multi-Path Routing-
dc.typeArticle-
dc.identifier.doi10.1109/LED.2021.3130579-
dc.citation.journaltitleIEEE Electron Device Letters-
dc.identifier.wosid000736740500045-
dc.identifier.scopusid2-s2.0-85120545297-
dc.citation.endpage165-
dc.citation.number1-
dc.citation.startpage162-
dc.citation.volume43-
dc.description.isOpenAccessN-
dc.contributor.affiliatedAuthorChoi, Woo Young-
dc.type.docTypeArticle-
dc.description.journalClass1-
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