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Multi-Layer Nanoelectromechanical (NEM) Memory Switches for Multi-Path Routing
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Yoon, Jisoo | - |
dc.contributor.author | Kwon, Hyug Su | - |
dc.contributor.author | Choi, Woo Young | - |
dc.date.accessioned | 2022-10-26T07:22:51Z | - |
dc.date.available | 2022-10-26T07:22:51Z | - |
dc.date.created | 2022-10-19 | - |
dc.date.issued | 2022-01 | - |
dc.identifier.citation | IEEE Electron Device Letters, Vol.43 No.1, pp.162-165 | - |
dc.identifier.issn | 0741-3106 | - |
dc.identifier.uri | https://hdl.handle.net/10371/186900 | - |
dc.description.abstract | Monolithic three-dimensional (M3D) multilayer nanoelectromechanical (NEM) memory switches are experimentally demonstrated for reconfigurable multi-path routing. The multi-layer NEM memory switch has moving mechanical beams in different metal layers which operate independently in a nonvolatile manner, including high impedance states. For example, double-layer NEM memory switches implement nine different memory states. It is predicted that our proposed n-layer NEM memory switches utilizing n metal layers will exhibit 3((n-1)) x higher routing flexibility and nx higher chip density than conventional single-layer NEM memory switches. | - |
dc.language | 영어 | - |
dc.publisher | Institute of Electrical and Electronics Engineers | - |
dc.title | Multi-Layer Nanoelectromechanical (NEM) Memory Switches for Multi-Path Routing | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/LED.2021.3130579 | - |
dc.citation.journaltitle | IEEE Electron Device Letters | - |
dc.identifier.wosid | 000736740500045 | - |
dc.identifier.scopusid | 2-s2.0-85120545297 | - |
dc.citation.endpage | 165 | - |
dc.citation.number | 1 | - |
dc.citation.startpage | 162 | - |
dc.citation.volume | 43 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Choi, Woo Young | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
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