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Nanoelectromechanical-Switch-Based Ternary Content-Addressable Memory (NEMTCAM)
Cited 3 time in
Web of Science
Cited 5 time in Scopus
- Authors
- Issue Date
- 2021-10
- Citation
- IEEE Transactions on Electron Devices, Vol.68 No.10, pp.4903-4909
- Abstract
- A tristate-nanoelectromechanical-switch-based ternary content-addressable memory (NEMTCAM) is proposed for the first time. In the proposed unit NEMTCAM cell, a single nanoelectromechanical (NEM) memory switch replaces two static random access memory cells. Due to the monolithic 3-D (M3D) integration and nonvolatile property of NEM memory switches, the proposed NEMTCAM achieves an 86.3% smaller area, 75.0% lower dynamic power consumption, and a 76.6% higher search speed than conventional ternary content-addressable memory (TCAM) in addition to a negligible static leakage current.
- ISSN
- 0018-9383
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