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Negative Capacitance Vacuum Channel Transistors for Low Operating Voltage

Cited 3 time in Web of Science Cited 3 time in Scopus
Authors

Choi, Woo Young

Issue Date
2020-05
Publisher
Multidisciplinary Digital Publishing Institute (MDPI)
Citation
Micromachines, Vol.11 No.6, p. 543
Abstract
This study proposes negative capacitance vacuum channel transistors. The proposed negative capacitance vacuum channel transistors in which a ferroelectric capacitor is connected in series to the gate of the vacuum channel transistors have the following two advantages: first, adding a ferroelectric capacitor in series with a gate capacitor makes the turn-on voltage lower and on-off transition steeper without causing hysteresis effects. Second, the capacitance matching between a ferroelectric capacitor and a vacuum channel transistor becomes simplified because the capacitance of a vacuum channel transistor as seen from a ferroelectric capacitor is constant.
ISSN
2072-666X
URI
https://hdl.handle.net/10371/186912
DOI
https://doi.org/10.3390/mi11060543
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