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Monolithic integration of GaAs//InGaAs photodetectors for multicolor detection
| DC Field | Value | Language |
|---|---|---|
| dc.contributor.author | Geum, Dae-Myeong | - |
| dc.contributor.author | Kim, SangHyeon | - |
| dc.contributor.author | Kim, SeongKwang | - |
| dc.contributor.author | Kang, SooSeok | - |
| dc.contributor.author | Kylun, JiHoon | - |
| dc.contributor.author | Song, Jindong | - |
| dc.contributor.author | Choi, Won Jun | - |
| dc.contributor.author | Yoon, Euijoon | - |
| dc.date.accessioned | 2022-10-26T07:41:36Z | - |
| dc.date.available | 2022-10-26T07:41:36Z | - |
| dc.date.created | 2022-10-19 | - |
| dc.date.issued | 2019-06 | - |
| dc.identifier.citation | 2019 SYMPOSIUM ON VLSI TECHNOLOGY, pp.T248-T249 | - |
| dc.identifier.uri | https://hdl.handle.net/10371/187003 | - |
| dc.description.abstract | Multicolor photodetectors (PDs) by using bulk p-i-n based visible GaAs and near-infrared (IR) InGaAs PD have been successfully fabricated via monolithic integration by wafer bonding and epitaxial lift-off. It showed high-performance individual operation comparable to that of bulk PDs with tight vertical alignment on a single substrate future high-resolution multicolor PDs. At the same time, it covered broad wavelength range from visible to IR. | - |
| dc.language | 영어 | - |
| dc.publisher | IEEE | - |
| dc.title | Monolithic integration of GaAs//InGaAs photodetectors for multicolor detection | - |
| dc.type | Article | - |
| dc.identifier.doi | 10.23919/VLSIT.2019.8776526 | - |
| dc.citation.journaltitle | 2019 SYMPOSIUM ON VLSI TECHNOLOGY | - |
| dc.identifier.wosid | 000555822600045 | - |
| dc.identifier.scopusid | 2-s2.0-85070341428 | - |
| dc.citation.endpage | T249 | - |
| dc.citation.startpage | T248 | - |
| dc.description.isOpenAccess | N | - |
| dc.contributor.affiliatedAuthor | Yoon, Euijoon | - |
| dc.type.docType | Proceedings Paper | - |
| dc.description.journalClass | 1 | - |
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