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Real- time Etch Control to Reduce First Wafer Effect in SF6/O-2/Ar Plasma
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Ryu, Sangwon | - |
dc.contributor.author | Jang, Yunchang | - |
dc.contributor.author | Kwon, Ji-Won | - |
dc.contributor.author | Park, Damdae | - |
dc.contributor.author | Lee, JongMin | - |
dc.contributor.author | Kim, Gon-Ho | - |
dc.date.accessioned | 2022-11-23T00:44:02Z | - |
dc.date.available | 2022-11-23T00:44:02Z | - |
dc.date.created | 2022-10-21 | - |
dc.date.issued | 2018-12 | - |
dc.identifier.citation | 2018 INTERNATIONAL SYMPOSIUM ON SEMICONDUCTOR MANUFACTURING (ISSM), p. 8651157 | - |
dc.identifier.uri | https://hdl.handle.net/10371/187214 | - |
dc.description.abstract | Real-time plasma controller for SF6/O-2/Ar etching process plasma was developed to reduce first wafer effect caused by cleaning of plasma facing components. After the cleaning of the reactor, the etch rate of silicon decreased 12 % from the etch rate of normal state and increased with repeating etching processes. To reduce the first wafer effect, real-time feedback controller for fluorine density was developed. The controller adjusted O-2 gas flow rate to keep monitored fluorine density constant. With the controller, the etch rate of silicon after the cleaning was kept within 1 % variation. | - |
dc.language | 영어 | - |
dc.publisher | IEEE | - |
dc.title | Real- time Etch Control to Reduce First Wafer Effect in SF6/O-2/Ar Plasma | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/ISSM.2018.8651157 | - |
dc.citation.journaltitle | 2018 INTERNATIONAL SYMPOSIUM ON SEMICONDUCTOR MANUFACTURING (ISSM) | - |
dc.identifier.wosid | 000462600900027 | - |
dc.identifier.scopusid | 2-s2.0-85063192694 | - |
dc.citation.startpage | 8651157 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Kim, Gon-Ho | - |
dc.type.docType | Proceedings Paper | - |
dc.description.journalClass | 1 | - |
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