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N-doped graphene field-effect transistors with enhanced electron mobility and air-stability
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Xu, Wentao | - |
dc.contributor.author | Lim, Tae-Seok | - |
dc.contributor.author | Seo, Hong-Kyu | - |
dc.contributor.author | Min, Sung-Yong | - |
dc.contributor.author | Cho, Himchan | - |
dc.contributor.author | Park, Min-Ho | - |
dc.contributor.author | Kim, Young-Hoon | - |
dc.contributor.author | Lee, Tae-Woo | - |
dc.date.accessioned | 2023-03-27T05:51:16Z | - |
dc.date.available | 2023-03-27T05:51:16Z | - |
dc.date.created | 2020-04-08 | - |
dc.date.issued | 2014-05 | - |
dc.identifier.citation | Small, Vol.10 No.10, pp.1999-2005 | - |
dc.identifier.issn | 1613-6810 | - |
dc.identifier.uri | https://hdl.handle.net/10371/189833 | - |
dc.description.abstract | Although graphene can be easily p-doped by various adsorbates, developing stable n-doped graphene that is very useful for practical device applications is a difficult challenge. We investigated the doping effect of solution-processed (4-(1,3-dimethyl-2,3-dihydro-1H-benzoimidazol-2-yl)phenyl)dimethylamine (N-DMBI) on chemical-vapor-deposited (CVD) graphene. Strong n-type doping is confirmed by Raman spectroscopy and the electrical transport characteristics of graphene field-effect transistors. The strong n-type doping effect shifts the Dirac point to around -140 V. Appropriate annealing at a low temperature of 80 oC enables an enhanced electron mobility of 1150 cm(2) V-1 s(-1). The work function and its uniformity on a large scale (1.2 mm x 1.2 mm) of the doped surface are evaluated using ultraviolet photoelectron spectroscopy and Kelvin probe mapping. Stable electrical properties are observed in a device aged in air for more than one month. | - |
dc.language | 영어 | - |
dc.publisher | Wiley - V C H Verlag GmbbH & Co. | - |
dc.title | N-doped graphene field-effect transistors with enhanced electron mobility and air-stability | - |
dc.type | Article | - |
dc.identifier.doi | 10.1002/smll.201303768 | - |
dc.citation.journaltitle | Small | - |
dc.identifier.wosid | 000336611000017 | - |
dc.identifier.scopusid | 2-s2.0-84901280757 | - |
dc.citation.endpage | 2005 | - |
dc.citation.number | 10 | - |
dc.citation.startpage | 1999 | - |
dc.citation.volume | 10 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Lee, Tae-Woo | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | CARBON NANOTUBES | - |
dc.subject.keywordPlus | RECENT PROGRESS | - |
dc.subject.keywordPlus | LAYER GRAPHENE | - |
dc.subject.keywordPlus | WORK-FUNCTION | - |
dc.subject.keywordPlus | NANORIBBONS | - |
dc.subject.keywordPlus | GROWTH | - |
dc.subject.keywordPlus | FABRICATION | - |
dc.subject.keywordAuthor | n-type doping | - |
dc.subject.keywordAuthor | graphene field-effect transistor | - |
dc.subject.keywordAuthor | carrier mobility | - |
dc.subject.keywordAuthor | dirac point | - |
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