Publications
Detailed Information
Nitrogen-Doped Graphene for High-Performance Ultracapacitors and the Importance of Nitrogen-Doped Sites at Basal Planes
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Jeong, Hyung Mo | - |
dc.contributor.author | Lee, Jung Woo | - |
dc.contributor.author | Shin, Weon Ho | - |
dc.contributor.author | Choi, Yoon Jeong | - |
dc.contributor.author | Shin, Hyun Joon | - |
dc.contributor.author | Kang, Jeung Ku | - |
dc.contributor.author | Choi, Jang Wook | - |
dc.date.accessioned | 2023-03-27T08:25:26Z | - |
dc.date.available | 2023-03-27T08:25:26Z | - |
dc.date.created | 2020-04-08 | - |
dc.date.issued | 2011-06 | - |
dc.identifier.citation | Nano Letters, Vol.11 No.6, pp.2472-2477 | - |
dc.identifier.issn | 1530-6984 | - |
dc.identifier.uri | https://hdl.handle.net/10371/189866 | - |
dc.description.abstract | Although various carbon nanomaterials including activated carbon, carbon nanotubes, and graphene have been successfully demonstrated for high-performance ultracapacitors, their capacitances need to be improved further for wider and more challenging applications. Herein, using nitrogen-doped graphene produced by a simple plasma process, we developed ultracapacitors whose capacitances (similar to 280 F/g(electrode)) are about 4 times larger than those of pristine graphene based counterparts without sacrificing other essential and useful properties for ultracapacitor operations including excellent cycle life (>200000), high power capability, and compatibility with flexible substrates. While we were trying to understand the improved capacitance using scanning photoemission microscopy with a capability of probing local nitrogen-carbon bonding configurations within a single sheet of graphene, we observed interesting microscopic features of N-configurations: N-doped sites even at basal planes, distinctive distributions of N-configurations between edges and basal planes, and their distinctive evolutions with plasma duration. The local N-configuration mappings during plasma treatment, alongside binding energy calculated by density functional theory, revealed that the origin of the improved capacitance is a certain N-configuration at basal planes. | - |
dc.language | 영어 | - |
dc.publisher | American Chemical Society | - |
dc.title | Nitrogen-Doped Graphene for High-Performance Ultracapacitors and the Importance of Nitrogen-Doped Sites at Basal Planes | - |
dc.type | Article | - |
dc.identifier.doi | 10.1021/nl2009058 | - |
dc.citation.journaltitle | Nano Letters | - |
dc.identifier.wosid | 000291322600048 | - |
dc.identifier.scopusid | 2-s2.0-79958784559 | - |
dc.citation.endpage | 2477 | - |
dc.citation.number | 6 | - |
dc.citation.startpage | 2472 | - |
dc.citation.volume | 11 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Choi, Jang Wook | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | ENERGY-STORAGE | - |
dc.subject.keywordPlus | ELECTROCHEMICAL CAPACITORS | - |
dc.subject.keywordPlus | CONDUCTING POLYMERS | - |
dc.subject.keywordPlus | ELECTRODE MATERIALS | - |
dc.subject.keywordPlus | DEPOSITION | - |
dc.subject.keywordPlus | REDUCTION | - |
dc.subject.keywordPlus | SHEETS | - |
dc.subject.keywordPlus | OXIDE | - |
dc.subject.keywordAuthor | Ultracapacitor | - |
dc.subject.keywordAuthor | graphene | - |
dc.subject.keywordAuthor | nitrogen doping | - |
dc.subject.keywordAuthor | plasma treatment | - |
dc.subject.keywordAuthor | scanning photoemission microscopy | - |
dc.subject.keywordAuthor | local mapping | - |
- Appears in Collections:
- Files in This Item:
- There are no files associated with this item.
Item View & Download Count
Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.