Publications
Detailed Information
Highly Stable Organic Transistors on Paper Enabled by a Simple and Universal Surface Planarization Method
Cited 13 time in
Web of Science
Cited 14 time in Scopus
- Authors
- Issue Date
- 2019-04
- Publisher
- John Wiley and Sons Ltd
- Citation
- Advanced Materials Interfaces, Vol.6 No.8, p. 1801731
- Abstract
- In this work, operationally and mechanically stable organic field-effect transistors (OFETs) are demonstrated on aramid fiber-based paper enabled by a simple and universal surface planarization method. By employing a nanoimprint lithography-inspired surface smoothening method, rough aramid paper is successfully smoothened from a scale of several tens of micrometers to a sub-nanometer-scale surface roughness. Owing to the sub-nanometer-scale surface roughness of the aramid paper, the OFETs fabricated on the aramid paper exhibit decent field-effect mobility (0.25 cm(2) V-1 s(-1)) with a high current on-to-off ratio (>10(7)), both of which are comparable with those of OFETs fabricated on rigid silicon substrates. Moreover, the OFETs fabricated on the aramid paper exhibit both high operational and mechanical stability; this is indicated by a bias-stress-induced threshold voltage shift ( increment V-TH approximate to 4.27 V under an excessive gate bias stress of 1.7 MV cm(-1) for 1 h 30 min) comparable to that of OFETs on a rigid silicon substrate, moderate field-effect mobility, and a threshold voltage stability under 1000 bending cycles with a compressive strain of 1%. The demonstration of highly stable OFETs on paper enabled by the simple planarization method will expand the potential use of various types of paper in electronic applications.
- ISSN
- 2196-7350
- Files in This Item:
- There are no files associated with this item.
Item View & Download Count
Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.