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Punctuated growth of InAs quantum dashes-in-a-well for enhanced 2-μm emission
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- Authors
- Issue Date
- 2023-03-06
- Citation
- Discover Nano, 18(1):31
- Abstract
- Abstract
InAs quantum dashes (Qdash) engineered to emit near 2μm are envisioned to be promising quantum emitters for next-generation technologies in sensing and communications. In this study, we explore the effect of punctuated growth (PG) on the structure and optical properties of InP-based InAs Qdashes emitting near the 2-μm wavelength. Morphological analysis revealed that PG led to an improvement in in-plane size uniformity and increases in average height and height distribution. A 2 × boost in photoluminescence intensity was observed, which we attribute to improved lateral dimensions and structural stabilization. PG encouraged formation of taller Qdashes while photoluminescence measurements revealed a blue-shift in the peak wavelength. We proposed that the blue-shift originates from the thinner quantum well cap and decreased distance between the Qdash and InAlGaAs barrier. This study on the punctuated growth of large InAs Qdashes is a step toward realizing bright, tunable, and broadband sources for 2-μm communications, spectroscopy, and sensing.
- Language
- English
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