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Executing Real-Time Programs on negative-AND Flash Memory Considering Read Disturb Errors
DC Field | Value | Language |
---|---|---|
dc.contributor.author | Shangina, Victoria | - |
dc.contributor.author | We, Kyoung-Soo | - |
dc.contributor.author | Lee, Changgun | - |
dc.date.accessioned | 2023-06-27T06:37:09Z | - |
dc.date.available | 2023-06-27T06:37:09Z | - |
dc.date.created | 2023-06-22 | - |
dc.date.created | 2023-06-22 | - |
dc.date.issued | 2017-12 | - |
dc.identifier.citation | 2017 3rd IEEE International Conference on Computer and Communications (ICCC), pp.2598-2602 | - |
dc.identifier.uri | https://hdl.handle.net/10371/192883 | - |
dc.description.abstract | NAND flash memory is widely used in embedded systems domain due to its non-volatility, low-power consumption, high degree of integration, and shock resistance. However, NAND flash memory only supports page-base read/write operations, to execute program codes from NAND flash memory, RAM whose per-byte price is much higher than that of NAND flash memory is essential. For the cost efficiency, there are researches for minimizing required RAM size to execute real-time tasks. However, since they do not consider read disturb errors, they have a limitation in terms of reliability. Therefore, in this paper, we propose an approach to execute hard real-time tasks on NAND flash memory with minimal RAM size while considering read disturb errors. The suggested approach requires 40% less RAM pages than Shadowing approach, and 36% more RAM pages than HRT-PLRU approach. | - |
dc.language | 영어 | - |
dc.publisher | 2017 3rd IEEE International Conference on Computer and Communications (ICCC) | - |
dc.title | Executing Real-Time Programs on negative-AND Flash Memory Considering Read Disturb Errors | - |
dc.type | Article | - |
dc.identifier.doi | 10.1109/CompComm.2017.8323005 | - |
dc.citation.journaltitle | 2017 3rd IEEE International Conference on Computer and Communications (ICCC) | - |
dc.identifier.wosid | 000440623602131 | - |
dc.identifier.scopusid | 2-s2.0-85049694358 | - |
dc.citation.endpage | 2602 | - |
dc.citation.startpage | 2598 | - |
dc.description.isOpenAccess | N | - |
dc.contributor.affiliatedAuthor | Lee, Changgun | - |
dc.type.docType | Proceedings Paper | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordAuthor | NAND flash memory | - |
dc.subject.keywordAuthor | reliability | - |
dc.subject.keywordAuthor | hard real-time | - |
dc.subject.keywordAuthor | read disturb | - |
dc.subject.keywordAuthor | embedded systems | - |
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