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Executing Real-Time Programs on negative-AND Flash Memory Considering Read Disturb Errors

DC Field Value Language
dc.contributor.authorShangina, Victoria-
dc.contributor.authorWe, Kyoung-Soo-
dc.contributor.authorLee, Changgun-
dc.date.accessioned2023-06-27T06:37:09Z-
dc.date.available2023-06-27T06:37:09Z-
dc.date.created2023-06-22-
dc.date.created2023-06-22-
dc.date.issued2017-12-
dc.identifier.citation2017 3rd IEEE International Conference on Computer and Communications (ICCC), pp.2598-2602-
dc.identifier.urihttps://hdl.handle.net/10371/192883-
dc.description.abstractNAND flash memory is widely used in embedded systems domain due to its non-volatility, low-power consumption, high degree of integration, and shock resistance. However, NAND flash memory only supports page-base read/write operations, to execute program codes from NAND flash memory, RAM whose per-byte price is much higher than that of NAND flash memory is essential. For the cost efficiency, there are researches for minimizing required RAM size to execute real-time tasks. However, since they do not consider read disturb errors, they have a limitation in terms of reliability. Therefore, in this paper, we propose an approach to execute hard real-time tasks on NAND flash memory with minimal RAM size while considering read disturb errors. The suggested approach requires 40% less RAM pages than Shadowing approach, and 36% more RAM pages than HRT-PLRU approach.-
dc.language영어-
dc.publisher2017 3rd IEEE International Conference on Computer and Communications (ICCC)-
dc.titleExecuting Real-Time Programs on negative-AND Flash Memory Considering Read Disturb Errors-
dc.typeArticle-
dc.identifier.doi10.1109/CompComm.2017.8323005-
dc.citation.journaltitle2017 3rd IEEE International Conference on Computer and Communications (ICCC)-
dc.identifier.wosid000440623602131-
dc.identifier.scopusid2-s2.0-85049694358-
dc.citation.endpage2602-
dc.citation.startpage2598-
dc.description.isOpenAccessN-
dc.contributor.affiliatedAuthorLee, Changgun-
dc.type.docTypeProceedings Paper-
dc.description.journalClass1-
dc.subject.keywordAuthorNAND flash memory-
dc.subject.keywordAuthorreliability-
dc.subject.keywordAuthorhard real-time-
dc.subject.keywordAuthorread disturb-
dc.subject.keywordAuthorembedded systems-
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