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Transparent thin film transistors of polycrystalline SnO2-x and epitaxial SnO2-x
DC Field | Value | Language |
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dc.contributor.author | Jang, Yeaju | - |
dc.contributor.author | Lee, Hahoon | - |
dc.contributor.author | Char, Kookrin | - |
dc.date.accessioned | 2023-10-30T02:01:44Z | - |
dc.date.available | 2023-10-30T02:01:44Z | - |
dc.date.created | 2020-05-18 | - |
dc.date.issued | 2020-03 | - |
dc.identifier.citation | AIP Advances, Vol.10 No.3, p. 035011 | - |
dc.identifier.issn | 2158-3226 | - |
dc.identifier.uri | https://hdl.handle.net/10371/195993 | - |
dc.description.abstract | We report on transparent thin film field effect transistors (TFTs) based on polycrystalline SnO2-x and epitaxial SnO2-x. Polycrystalline SnO2-x TFTs of the top and the bottom gate geometries exhibited high mobility values of 145.7 cm(2)/V s and 160.0 cm(2)/V s, respectively. However, our polycrystalline SnO2-x devices showed non-ideal behaviors in their output and transfer characteristics; a large hysteresis was observed along with large voltage dependence. The probable origin of these non-ideal behaviors is the barrier formation across grain boundaries of polycrystalline SnO2. To confirm this, we used SnO2-x epitaxially grown on r-plane sapphire substrates as a channel layer and compared their performance with those of polycrystalline SnO2-x based TFTs. Although the mobility of epitaxial SnO2-x TFTs was not as high as that of the polycrystalline SnO2-x TFTs, the non-ideal voltage dependence in output and transfer characteristics disappeared. We believe our direct experimental comparison clearly demonstrates the grain boundary issue in polycrystalline SnO2-x. | - |
dc.language | 영어 | - |
dc.publisher | American Institute of Physics Inc. | - |
dc.title | Transparent thin film transistors of polycrystalline SnO2-x and epitaxial SnO2-x | - |
dc.type | Article | - |
dc.identifier.doi | 10.1063/1.5143468 | - |
dc.citation.journaltitle | AIP Advances | - |
dc.identifier.wosid | 000519951800002 | - |
dc.identifier.scopusid | 2-s2.0-85081538565 | - |
dc.citation.number | 3 | - |
dc.citation.startpage | 035011 | - |
dc.citation.volume | 10 | - |
dc.description.isOpenAccess | Y | - |
dc.contributor.affiliatedAuthor | Char, Kookrin | - |
dc.type.docType | Article | - |
dc.description.journalClass | 1 | - |
dc.subject.keywordPlus | MOBILITY | - |
dc.subject.keywordPlus | FERROELECTRICITY | - |
dc.subject.keywordPlus | SEMICONDUCTORS | - |
dc.subject.keywordPlus | SURFACE | - |
dc.subject.keywordPlus | ZNO | - |
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