270-to-300GHz Double-Balanced Parametric Upconverter Using Asymmetric MOS Varactors and a Power-Splitting-Transformer Hybrid in 65nm CMOS

Abstract

Wireless communication at \sim 300 GHz is drawing attention due to its potential to support a high data-rate using the wide available bandwidth. Transmitters operating at \sim 300 GHz have been reported in [1] -[5]. In order to support the high-order modulation, high datarate, and an increased range, the transmitter must have a high output 1dB compression point (OP _{1dB}) and a wide bandwidth. Unfortunately, instead of OP1dB, only the saturated output power levels, {P}_{sat}, of the CMOS transmitters [3- 5] _{} are reported. A 272GHz CMOS amplifier has been reported in [6], but it only achieves an OP1dB of -10.18dBm and a 3dB bandwidth of less than 5GHz. Broadband power amplification at 300GHz in CMOS is not practical since the transistor fmax is \sim 350 GHz or less. Due to this, the CMOStransmitter linear output power is limited by the upconversion mixer OP1dB. Unfortunately, the mixers operating near 300GHz suffer from low conversion gain (CG) and OP1dB.