Publications
Detailed Information
Millimeter-Wave High-Linear CMOS Low-Noise Amplifier Using Multiple-Gate Transistors
Cited 2 time in
Web of Science
Cited 2 time in Scopus
- Authors
- Issue Date
- 2011-06
- Publisher
- 한국전자통신연구원
- Citation
- ETRI Journal, Vol.33 No.3, pp.462-465
- Abstract
- A millimeter-wave (mm-wave) high-linear low-noise amplifier (LNA) is presented using a 0.18 mu m standard CMOS process. To improve the linearity of mm-wave LNAs, we adopted the multiple-gate transistor (MGTR) topology used in the low frequency range. By using an MGTR having a different gate-source bias at the last stage of LNAs, third-order input intercept point (IIP3) and 1-dB gain compression point (P(1dB)) increase by 4.85 dBm and 4 dBm, respectively without noise figure (NF) degradation. At 33 GHz, the proposed LNAs represent 9.5 dB gain, 7.13 dB NF, and 625 dBm IIP3.
- ISSN
- 1225-6463
- Files in This Item:
- There are no files associated with this item.
Related Researcher
- College of Engineering
- Department of Electrical and Computer Engineering
Item View & Download Count
Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.