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W-band low-noise amplifier with 50 nm In0.8GaP/In0.4AlAs/In0.35GaAs metamorphic HEMT
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- Authors
- Issue Date
- 2008
- Publisher
- IEEE
- Citation
- Conference Proceedings - International Conference on Indium Phosphide and Related Materials, pp.213-215
- Abstract
- W-band low-noise amplifier (LNA) has been successfully demonstrated with 50 nm metamorphic HEMT (MHEMT) technologies. 50 nm MHEMT showed a g m.max of 760 mS/mm, a fT of 216 GHz, and a fmax of 400 GHz in spite of indium content of 35 % in the channel. W-band LNA with three-stage showed the small signal gain of 9.4 ± 1.8 dB from 40 GHz to 110 GHz. These results are well suited for high frequency applications.
- ISSN
- 1092-8669
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Related Researcher
- Choi, Wooyeol최우열
- 조교수
- College of Engineering
- Department of Electrical and Computer Engineering
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