High performance of W-band MMICs using 60nm InGaAs HEMT technology

Abstract

A W-band coplanar wave-guide MMIC (a mixer, an oscillator and an ultra broad-band distributed amplifier) has been successfully developed by 60nm gate length InGaAs HEMT technology. 60nm gate length was defined by Si 3N 4SiO 2 sidewall process. The device exhibits good DC and microwave characteristics of V th = -0.65 V, breakdown voltage = -4.1V, extrinsic G m,max = 1.15S/mm, f T= 250 GHz and f max of 263GHz. A mixer exhibits conversion loss of 7dB with 94GHz LO signal and 90GHz RF signal. An oscillator exhibits output power of -4dB at 96GHz. A broadband distributed amplifier achieves small signal gain of 6.6 dB over 0.4∼110GHz. © 2004 IEEE.