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Epitaxially Self-Assembled Alkane Layers for Graphene Electronics
Cited 26 time in
Web of Science
Cited 24 time in Scopus
- Authors
- Issue Date
- 2017-02
- Citation
- Advanced Materials, Vol.29 No.5, p. 1603925
- Abstract
- The epitaxially grown alkane layers on graphene are prepared by a simple drop-casting method and greatly reduce the environmentally driven doping and charge impurities in graphene. Multiscale simulation studies show that this enhancement of charge homogeneity in graphene originates from the lifting of graphene from the SiO2 surface toward the well-ordered and rigid alkane selfassembled layers.
- ISSN
- 0935-9648
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