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Heterostructures based on inorganic and organic van der Waals systems

Cited 57 time in Web of Science Cited 60 time in Scopus
Authors

Lee, Gwan-HyoungLee, Chul-Ho; van der Zande, Arend M.; Han, Minyong; Cui, Xu; Arefe, Ghidewon; Nuckolls, Colin; Heinz, Tony F.; Hone, James; Kim, Philip

Issue Date
2014-09
Publisher
American Institute of Physics Publising LLC
Citation
APL Materials, Vol.2 No.9, p. 092511
Abstract
The two-dimensional limit of layered materials has recently been realized through the use of van der Waals (vdW) heterostructures composed of weakly interacting layers. In this paper, we describe two different classes of vdW heterostructures: inorganic vdW heterostructures prepared by co-lamination and restacking; and organicinorganic hetero-epitaxy created by physical vapor deposition of organic molecule crystals on an inorganic vdW substrate. Both types of heterostructures exhibit atomically clean vdW interfaces. Employing such vdW heterostructures, we have demonstrated various novel devices, including graphene/hexagonal boron nitride (hBN) and MoS2 heterostructures for memory devices; graphene/MoS2/WSe2/graphene vertical p-n junctions for photovoltaic devices, and organic crystals on hBN with graphene electrodes for high-performance transistors. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
ISSN
2166-532X
URI
https://hdl.handle.net/10371/202116
DOI
https://doi.org/10.1063/1.4894435
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  • College of Engineering
  • Department of Materials Science & Engineering
Research Area 2D materials, 2차원 물질, Smiconductor process, semiconductor devices, 반도체 공정, 반도체 소자

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