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Angle-Independent Top-Emitting Quantum-Dot Light-Emitting Diodes Using a Solution-Processed Subwavelength Scattering-Capping Layer : Angle-Independent Top-Emitting Quantum-Dot Light-Emitting Diodes Using a Solution-Processed Subwavelength Scattering–Capping Layer

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Authors

Lee, Taesoo; Lee, Minhyung; Kim, Kyuho; Lee, Hyunkoo; Yoon, Suk-Young; Yang, Heesun; Yu, Sunkyu; Kwak, Jeonghun

Issue Date
2024-04
Publisher
John Wiley and Sons Inc.
Citation
Advanced Optical Materials, Vol.12 No.12
Abstract
Owing to the excellent optoelectronic properties of colloidal quantum dots (QDs), light-emitting diodes based on QDs (QLEDs) have been considered one of the most promising electroluminescence (EL) devices for full-color displays with a wide color gamut. Particularly, top-emission device architecture has been of interest to both academia and industry, because of the advantages in light outcoupling, aperture ratios, and integration with conventional backplanes. In this structure, however, angle-dependent color shifts originating from a variation in microcavity length are a critical issue that needs to be resolved. Here, a solution-processed dual-functional scattering-capping layer (SCPL) using ZnO nanoparticles on top-emitting QLEDs with ZnSeTe/ZnSe/ZnS QDs to modulate the optical interference is presented. By precisely controlling the thickness of the SCPL, the EL intensity and spectrum can be redistributed to produce a uniform color from any viewing angle. It is discovered that, unlike conventional CPLs, the formation of random nanocracks and nanoclusters in the SCPL adds subwavelength light-scattering capabilities, which promotes light extraction. The QLEDs with the solution-processed SCPL exhibit a 44% increase in the maximum external quantum efficiency, with completely imperceptible angle-dependent spectral shifts. The SCPL is expected to be applied to the development of high-performance and next-generation QLED displays. The introduction of a solution-processed scattering capping layer using ZnO nanoparticles on the top-emitting blue ZnSeTe-based quantum-dot (QD) light-emitting diodes (QLEDs) improves the light outcoupling, leading to the realization of efficient and angle-independent top-emitting QLEDs. The enhancement is attributed to subwavelength scattering from the naturally formed ZnO clusters and nanocracks, verified by ZnO morphology studies and optical simulations modeling it. image
ISSN
2195-1071
URI
https://hdl.handle.net/10371/202179
DOI
https://doi.org/10.1002/adom.202302509
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  • College of Engineering
  • Department of Electrical and Computer Engineering
Research Area Disordered, Open-System Wave Mechanics, Photonic AI Systems, Photonic Neuromorphic Devices, 광학 뉴로모픽 소자, 광학 인공지능 시스템, 무질서, 열린계 파동역학

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