Publications
Detailed Information
Optoelectronics of Multijunction Heterostructures of Transition Metal Dichalcogenides
Cited 29 time in
Web of Science
Cited 30 time in Scopus
- Authors
- Issue Date
- 2020-03
- Publisher
- American Chemical Society
- Citation
- Nano Letters, Vol.20 No.3, pp.1934-1943
- Abstract
- Among p-n junction devices with multilayered heterostructures with WSe2 and MoSe2, a device with the MoSe2-WSe2-MoSe2 (NPN) structure showed a remarkably high photoresponse, which was 1000 times higher than the MoSe2-WSe2 (NP) structure. The ideality factor of the NPN structure was estimated to be similar to 1, lower than that of the NP structure. It is claimed that the NPN structure formed a thinner depletion region than that of the NP structure because of the difference of carrier concentrations of MoSe2 and WSe2. Hence, the built-in electric field was weaker, and the motion of the photocarriers was facilitated. These behaviors were confirmed experimentally from a photocurrent mapping analysis and Kelvin probe force microscopy. The work function depended on the wavelength of the illuminator, and quasi-Fermi level was estimated. The surface photovoltage on the MoSe2 region was higher than that on WSe2 because the lower bandgap of MoSe2 induces more electron-hole pair generation.
- ISSN
- 1530-6984
- Files in This Item:
- There are no files associated with this item.
Related Researcher
- College of Engineering
- Department of Electrical and Computer Engineering
Item View & Download Count
Items in S-Space are protected by copyright, with all rights reserved, unless otherwise indicated.