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Photovoltaic Field-Effect Transistors Using a MoS2 and Organic Rubrene van der Waals Hybrid
Cited 45 time in
Web of Science
Cited 47 time in Scopus
- Authors
- Issue Date
- 2018-09
- Publisher
- American Chemical Society
- Citation
- ACS Applied Materials & Interfaces, Vol.10 No.35, pp.29848-29856
- Abstract
- A several-layer n-type MoS2 was partially hybridized with an organic crystalline p-type rubrene nanosheet through van der Waals interactions to fabricate a two-dimensional (2-D) lateral-type n-p heterojunction optoelectronic device. The field-effect transistors (FETs) using lateral-type MoS2/rubrene hybrids exhibited both gate tunable diode and anti-ambipolar transistor characteristics. The FET devices show the coexistence of n-type states, p-type states, and off-states controlled by the gate bias. From the photocurrent mapping experiments, the gate-bias-dependent photovoltaic effect was observed from the heterojunction regions of the MoS2/rubrene FETs. FETs were successfully operated by light irradiation without applying source-drain bias and controlled using gate bias. These devices represent new solar-energy-driven 2-D multifunctional electronic devices. Furthermore, the photovoltaic
- ISSN
- 1944-8244
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Related Researcher
- College of Engineering
- Department of Electrical and Computer Engineering
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