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GaN/In1−xGaxN/GaN/ZnO nanoarchitecture light emitting diode microarrays : GaN/In1-xGaxN/GaN/ZnO nanoarchitecture light emitting diode microarrays
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Cited 65 time in Scopus
- Authors
- Issue Date
- 2009-05
- Publisher
- American Institute of Physics
- Citation
- Applied Physics Letters, Vol.94 No.21, p. 213101
- Abstract
- We studied the fabrication and electroluminescent (EL) characteristics of GaN/In1-xGaxN/GaN/ZnO nanoarchitecture light emitting diode (LED) microarrays consisting of position-controlled GaN/ZnO coaxial nanotube heterostructures. For the fabrication of nanoarchitecture LED arrays, n-GaN, GaN/In0.24Ga0.76N multiquantum well (MQW) structures and p-GaN layers were deposited coaxially over the entire surface of position-controlled ZnO nanotube arrays grown vertically on c-plane sapphire substrates. The nanoarchitecture LEDs exhibited strong green and blue emission from the GaN/GaN/In0.24Ga0.76N MQWs at room temperature. Furthermore, the origins of dominant EL peaks are also discussed.
- ISSN
- 0003-6951
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Related Researcher
- College of Engineering
- Department of Electrical and Computer Engineering
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